The N-doped Ga2O3-based TFTs displays p-type characteristics with a field effect mobility of 2.13×10-3 cm2/V∙ s, an on/off ratio of 2.78×104 and a sub-threshold swing of 0.15 V/dec. Finally, a full ...

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Organic Bioelectronics Laboratory, Biological and Environmental Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia ...

We incorporate the EEFO approach, together with Newton-Raphson method, into the parameter tuning process for three PV models: single-diode, double-diode, and three-diode models, using a common ...