When electronic devices overheat, they can slow down, malfunction, or stop working altogether. This heat is mainly caused by ...

Silicon nanowires, prepared by electroless chemical etching, are used to fabricate dual-gate field-effect transistors. The diameters of the nanowires vary from 40-300 nm, with a maximum aspect ratio ...

Gallium nitride, a semiconductor renowned for its efficiency and high-speed capabilities, has long been recognized as a ...

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication ...

Build a modern twist on the classic Theremin using time-of-flight sensors and analog sound generation. No musical talent required, just a love for tinkering!

STMicroelectronics is aiming at domestic induction hobs and microwaves with a 1.6kV IGBT in a long lead TO-247 package.

Imec has developed a GaN MOSHEMT on silicon that achieves both record efficiency and output power for an enhancement-mode ...

Graphene-based Biology-gated Transistors (Cardean Transistors) directly read molecular signals of active biology using advanced electronics. This proprietary tech breakthrough can be used as a ...

Organic thin film field effect transistors of water-soluble cationic and anionic phthalocyanine derivatives were successfully prepared using the layer-by-layer deposition technique. The alternating ...

Time-resolved microscopic optical second harmonic generation (TRM-SHG) imaging was used to study the transient carrier behaviors in pentacene field effect transistor (FET) with Au and Ag electrodes on ...