We propose a variability characterization methodology using a topology-reconfigurable ring oscillator (RO) which enables in-situ characterization of individual transistors in the RO. By configuring ...

When electronic devices overheat, they can slow down, malfunction, or stop working altogether. This heat is mainly caused by ...

Silicon nanowires, prepared by electroless chemical etching, are used to fabricate dual-gate field-effect transistors. The diameters of the nanowires vary from 40-300 nm, with a maximum aspect ratio ...