Package, 1 A and 2 A Devices Offer Low Capacitive Charge and High Minimum Creepage Distance of 3.2 mm MALVERN, Pa., July 09, ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

Avalanche photodiodes (APDs) for ultra-sensitive infrared detection at eye-safe wavelengths are built around compound ...

Off-the-board technology has proceeded in three waves, and the third wave is still unfolding. Based on the author’s experience working with startups, the third wave may coincide with the end of copper ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

As the complexity of integrated circuits increases, the electrostatic discharge (ESD) protection devices become critical to reliability issues. However, the physical failure analysis of ESD devices is ...

Avalanche breakdown is defined in terms of the diode's electrical characteristics as well as the internal physical processes. Using the latter definition, and the basic diffusion equation, breakdown ...

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