Engineered for next-gen AI servers, telecom systems, and solar inverters, the latest silicon carbide Schottky diodes offer ...

Sun Nuclear, a Mirion Medical company, will present significant additions to its comprehensive portfolio of Radiation Therapy Quality Management solutions at the 2025 American Association of ...

Package, 1 A and 2 A Devices Offer Low Capacitive Charge and High Minimum Creepage Distance of 3.2 mmMALVERN, Pa., July 09, ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in two publications.

Researchers at the Jülich Research Center and the Leibniz Institute for Innovative Microelectronics (IHP) have developed a ...

Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding ...

Nexperia has announced two new additions of 1200 V 20 A silicon carbide (SiC) Schottky diodes to its power portfolio.

SuperQ is first significant advance in silicon MOSFET design in over a quarter of a century, delivering unmatched performance ...

Researchers have developed a material that has never existed before: a stable alloy of carbon, silicon, germanium, and tin. What makes this material special is that all four elements, like silicon, ...

German researchers have developed a new material, opening up new opportunities in electronics, photonics and quantum.

In a first for the field, researchers from The Grainger College of Engineering at the University of Illinois Urbana-Champaign ...