The lateral High Electron Mobility Transistor (HEMT) enables monolithic integration for high-frequency switching and control applications. The authors created a bipolar, high-frequency GaN HEMT-based ...

A friend recently sent me an email noting that the classic 2N3904 bipolar transistor was now 60 years old. Since its “birth” ...

At the upcoming PCIM Conference (6th - 8th May, Nuremberg, Germany) Fraunhofer IAF will present a paper on a novel GaN ...

New research led by researchers at the University of Bristol has linked the body’s immune response with schizophrenia, Alzheimer’s disease, depression, and bipolar disorder. The study demonstrates ...

Some people hear the term "bipolar disorder" and think it means sudden mood swings. They're partly right. It's true that people with bipolar disorder go through periods of high energy, and also ...

This chapter demonstrates that the charge pumping (CP) technique can be used to characterize two interfaces of the SOI layer when the SOI MOSFET has a body contact. Since the body contact and the ...

These inherently normally off p-GaN gate e-mode transistors (Figure 1) feature zero reverse-recovery charge, making them ideal for ultra-high-frequency applications. Also available from ST is the ...

In a recent interview with Billboard Español, the singer, who revealed in 2022 that she had been diagnosed with bipolar disorder, made another reference and explained why she continues to fight ...

The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based ...

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