The lateral High Electron Mobility Transistor (HEMT) enables monolithic integration for high-frequency switching and control applications. The authors created a bipolar, high-frequency GaN HEMT-based ...

A friend recently sent me an email noting that the classic 2N3904 bipolar transistor was now 60 years old. Since its “birth” ...

The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based ...