These features make them suited for three-phase inverter drive applications such as electronically commutated (EC) fans in AI ...

However, these power-handling advantages come at a cost. SiC power MOSFETs can cost up to 3X more than the IGBTs currently used throughout the EV. The price difference is driven by the complexity ...

Silicon power electronic devices such as IGBTs and MOSFETs can also be controlled via the gate. Here less speed is required, e.g. 120 MHz arbitrary waveform generation is adequate. Therefore, it can ...

onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs).

The company’s GaN hemts are ICs that include gate drive circuits that allow them to be controlled by drivers intended for silicon mosfets up to 20V. Some also include current sensing. The paralleled ...

V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...