According to onsemi, SiC MOSFETs can run increasingly power-hungry cooling fans in AI data centers more efficiently and ...

However, their historically lower short-circuit robustness compared to silicon-based IGBTs has posed challenges for their use ... are well-screened for latent defects and offer easier gate driver ...

The next generation of power modules is built to reduce energy use, lower costs, and cut emissions across fans, drives, and ...

As shown in Figure 5, this often enables the realization of a simpler circuit topology (e.g., two-level ... a more sequential approach was used to select the right gate driver where, for instance, an ...

For example, by implementing EliteSiC SPM 31 IPMs, compared to a IGBT power integrated module with power ... SPM 31 IPM consists of an independent high side gate driver, low voltage integrated circuit ...

Figure 2: Improved current density with checked-pattern integrated SBD in the SiC MOSFET (Source: Toshiba Electronic and Device Storage Corporation) The short-circuit withstand ability is a key metric ...

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Infineon is developing TRENCHSTOP H7 IGBTs in a DTO247 package, which is twice the size of a standard TO247. A single ...

The latest graphics processing units (GPUs), such as the Blackwell B100 and B200 at the heart of NVIDIA’s latest AI ...

AI chips and data center communications see big funding; 75 startups raise $2 billion. The first quarter of 2025 saw six ...

Advanced Linear Devices has introduced a voltage balancing IC for series-connected pairs of 3.3V supercapacitors. Inside is a pair of mosfet-like devices with a sharp ‘knee’ in their voltage-current ...