Toshiba Electronics Europe is introducing a number of solutions to enable engineers to meet their system efficiency and sustainability goals at PCIM 2025 in Nuremberg, Germany (May 6-8, 2025).

Complemented by onsemi’s IGBT SPM 31 IPM portfolio ... EliteSiC SPM 31 IPM consists of an independent high side gate driver, low voltage integrated circuit (LVIC), six EliteSiC MOSFETs and a ...

According to onsemi, SiC MOSFETs can run increasingly power-hungry cooling fans in AI data centers more efficiently and reliably than IGBTs.

The major semiconductors being mass-produced this year include power integration chips that combine power control features ... battery management integrated circuits (ICs) already being supplied ...

This paper proposes a hybrid energy storage method achieved by extending the IGBT turn-on time in the voltage multiplication circuit. This method is primarily ... making the new power supply reliable ...

The next generation of power modules is built to reduce energy use, lower costs, and cut emissions across fans, drives, and ...

The fully integrated EliteSiC SPM 31 IPM consists of an independent high side gate driver, low voltage integrated circuit ... of control algorithm. The EliteSiC SPM 31 IPMs offer several current ...

These EliteSiC SPM 31 IPMs are said to deliver the highest energy efficiency and power density in the smallest form factor compared to using Field Stop 7 IGBT technology ... low voltage integrated ...

It is not possible to follow the normal, relatively sequential path that is often taken for conventional, silicon power circuit design ... power supplies as well as motor and motion control.

For all the advantages of GaN and SiC, however, these switch types are still somewhat exotic compared with the tried and trusted silicon MOSFET or IGBT. Reference and demonstration ... It employs a ...