At the upcoming PCIM Conference (6th - 8th May, Nuremberg, Germany) Fraunhofer IAF will present a paper on a novel GaN ...

Innoscience Technology has launched a 100V bi ... directional transistor, intended to replace a pair of back-to-back mosfets for turning a power rail on and off. It “can be employed in 48V or 60V ...

Fraunhofer IAF has developed a monolithic bidirectional switch with a blocking voltage of 1200 V using its GaN-on-insulator ...

Low power high performance designs have become a recent trend in modern SoC design community. Often multiple voltage domains are being created in order to cater the need of low power requirements and ...