Power inverters are the beating heart in the drive train of modern electric cars. They turn the electrical energy from the ...

The inverter features stacked n-type and p-type nanosheet transistors with backside contacts and achieves a voltage transfer up to 1.2V and a subthreshold slope between 74 and 76mV/V for both ...

development of a novel high-electron-mobility transistor (HEMT) based on a multi-mesa-channel structure with hetero-interface control, and design and simulation of power inverters utilizing the GaN ...

In a paper published in Nature’s Scientific Reports, Surrey scientists led by Sporea modelled two-transistor inverters made 4µm source-drain gap poly-silicon FETs or SGTs – using models calibrated ...

The inverter was built with 3.3-kV SiC transistors that have lower power losses than standard silicon transistors. “This makes it possible to operate the inverter stack with a switching ...

Designed for large-scale storage projects, the inverter features a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC) MOSFET technology, which the company said supports high ...

By adopting proprietary diode and insulated gate bipolar transistor (IGBT ... will help to improve the efficiency and reliability of inverters for large industrial equipment operating in diverse ...