Power inverters are the beating heart in the drive train of modern electric cars. They turn the electrical energy from the ...

In a paper published in Nature’s Scientific Reports, Surrey scientists led by Sporea modelled two-transistor inverters made 4µm source-drain gap poly-silicon FETs or SGTs – using models calibrated ...

development of a novel high-electron-mobility transistor (HEMT) based on a multi-mesa-channel structure with hetero-interface control, and design and simulation of power inverters utilizing the GaN ...

The inverter was built with 3.3-kV SiC transistors that have lower power losses than standard silicon transistors. “This makes it possible to operate the inverter stack with a switching ...

Designed for large-scale storage projects, the inverter features a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC) MOSFET technology, which the company said supports high ...