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Ultrathin ferroelectric capacitors for next-generation memory devices
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...
MRAM is one of the most promising emerging memory technologies we have, as it can theoretical improve on nearly every metric of existing DRAM and SRAM technologies. However, MRAM requires significant ...
Researchers have developed a technology for voltage-controlled magnetization switching, which has the potential to be implemented in next-generation computational memory. This advanced technology ...
Recent advances in the field of artificial intelligence (AI) have opened new exciting possibilities for the rapid analysis of ...
Schematic showing a single DNA duplex bridging two gold electrodes (yellow) patterned on a silicon nitride substrate (green). The setup allows measurement of electrical conductance as metal ions bind ...
Osaka, Japan – Numerous memory types for computing devices have emerged in recent years, aiming to overcome the limitations imposed by traditional random access memory (RAM). Magnetoresistive RAM ...
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