The first shipments are Gen 2 650V, 40A devices in a TO-247 package with a co-packed diode.

In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

Credit: CGD The Combo ICeGaN combines smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximising efficiency and offering a cost-effective alternative to ...

"Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN ...