Power Integrations Automotive-Qualified Qspeed Silicon Diodes Feature Lowest Qrr for Efficient, High-Switching-Speed Designs. These 600 V 12 A diodes can replace SiC components in automotive ...

We’ve trodden this path in the past and settled on a DC bias to reduce the extra forward voltage needed for a 1N4148 silicon diode to conduct because, like him, we found a Schottky disappointing.

Vishay Intertechnology, Inc. (NYSE: VSH) has introduced a new series of advanced silicon carbide (SiC) Schottky diodes aimed at boosting efficiency in high-speed, hard-switching power systems. The ...

Generation of random numbers by measuring phase fluctuations from a laser diode with a silicon-on-in. ScienceDaily. Retrieved June 2, 2025 from www.sciencedaily.com / releases / 2018 / 07 ...

Cree, Inc. announces availability of its Silicon Carbide (SiC) power products, world-class 600V SiC Junction Barrier Schottky (JBS) diodes.

Moreover, the turn-on voltage of a GaN power FET tends to be higher than the turn-on voltage of a silicon diode, leading to a disadvantage during reverse-conduction operation, according to Infineon.