Vishay Intertechnology, Inc. (NYSE: VSH) has introduced a new series of advanced silicon carbide (SiC) Schottky diodes aimed at boosting efficiency in high-speed, hard-switching power systems. The ...

Further data on the mosfet is sadly not public at the moment, but the diode data sheet is available and shows a 2.1V typical forward drop at Tj = 25°C, increasing to 4.3V with the junction at 175°C.

Developed by Power Integrations, the 600-V 12-A diodes feature reverse-recovery charge claimed to be the lowest in the industry. Generally speaking, silicon-carbide (SiC) technology provides ...

Then, once the size of MIT's diode for light is scaled down -- it's currently around 400nm long, some 20 times larger than a transistor -- we might begin to see photonic circuits in computers ...

MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes, designed for high-frequency applications where ...

Power Integrations Automotive-Qualified Qspeed Silicon Diodes Feature Lowest Qrr for Efficient, High-Switching-Speed Designs. These 600 V 12 A diodes can replace SiC components in automotive ...

With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film.

MALVERN, Pa., July 09, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the compact, low ...