Infineon Technologies AG has released the world's first GaN power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Schottky diodes and MOSFETs as well as Gallium Nitride (GaN) HEMTs. The specialization provides an overview of devices, the physics background needed to understand the device operation, the ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. "Due to the ...

[GreatScott] points out that there are other useful diodes and, in particular, he posted a video covering Schottky and Zener diodes. These special diodes have particular purposes. A Schottky diode ...

Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low figure-of-merit (FOM) ...

Additionally, their high operating temperature up to +175 °C and positive temperature coefficient simplify parallel operation ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Engineered to reduce reverse conduction losses and eliminate dead-time penalties, this innovation enables higher performance across applications like telecom, servers, DC-DC converters, USB-C chargers ...