Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

The high-performance SiC diodes are also notable for their low reverse leakage (IR) at 20µA (max.) which minimises heat dissipation and conduction losses, improving system stability and reliability, ...

Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low figure-of-merit (FOM) ...

Diodes has introduced some 650V SiC Schottky diodes, rated at 4, 6, 8, 10 or 12A. Called the DSCxxA065LP series, they come in a 8 x 8 x 1mm T-DFN8080-4 ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. "Due to the ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces the expansion of its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC ...

It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, and IGBTs but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as ...

MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide ...

In most applications it has been supplanted by the Schottky diode, but even those usually don’t quite possess the speed in the point contact’s home ground of radio detection. This is a shame ...

Diodes Incorporated’s DIOD share price has dipped by 8.02%, which has investors questioning if this is right time to buy.