New SiC MOSFET, featuring a trench structure that maximizes SiC characteristics, achieves optimum performance by combining exceedingly low loss with high-speed switching performance. ROHM is now ...

Infineon’s 650-V and 1200-V CoolSiC G2 MOSFETs improve stored energy and charges by up to 20% compared to the previous generation. This second generation of CoolSiC trench MOSFETs continues to harness ...

Rohm BSM180D12P3C007 Trench SiC MOSFET Structure and Cost Analysis Report - Research and Markets June 27, 2017 12:07 PM Eastern Daylight Time ...

1) Improved trench structure delivers the industry’s lowest ON resistance In 2015, ROHM began mass production of the industry-first trench-type SiC MOSFETs utilizing an original structure.

Navitas Semiconductor NVTS offers a robust and expanding line of silicon carbide (SiC) products through its GeneSiC brand, enabling high-voltage, high-efficiency, and high-reliability performance ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

World-leading performance over temperature enables cool-running, fast-switching 650 V and 1,200 V SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs Navitas ...

PCIM: First trench SiC mosfet is 2x better Trench structures will halve the on-resistance of silicon carbide power mosfets, claimed Rohm. “Compared to existing planar-type SiC mosfets, on-resistance ...

Mitsubishi Electric announced its new trench-type SiC-MOSFET today at the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, which is being held at the Kyoto ...

The automotive-graded silicon carbide (SiC) MOSFET generation offers high power density and efficiency, enables bi-directional charging and significantly reduces system cost in on-board charging (OBC) ...

Selected from a total of 230 contributions, it focuses on next-generation silicon-carbide (SiC) planar MOSFETs, trench structure Schottky diodes, and trench MOSFETs.