Energy band diagram of pn junction under forward bias, Continuity equation, Boundary conditions, Ideal diode equation, Long- and short-base diodes, Recombination and generation in the depletion region ...

This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance.

Bipolar devices, such as pn diodes and bipolar junction transistors, hold promising potential in the high-power electronics industry due to their ability to withstand reverse voltage currents.

A brief introduction to solid-state physics, leading to discussion of physical characteristics of p-n junction diodes, bipolar junction transistors, and field-effect transistors: active, saturated, ...