Metal-Semiconductor Field-Effect Transistors (MESFETs) have long been pivotal in bridging fundamental semiconductor physics with high-performance electronic applications. As devices that combine ...

Navitas Semiconductor NVTS offers a robust and expanding line of silicon carbide (SiC) products through its GeneSiC brand, enabling high-voltage, high-efficiency, and high-reliability performance ...

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...

ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

Field-effect transistors (FET) with advanced carrier mobilities are thought possible with metal halide perovskite semiconductors. By manipulating this material, optimized optoelectronic properties can ...

Mar 21, 2024 World's first N-channel diamond field-effect transistor (Nanowerk News) A NIMS research team has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor ...

Here, we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device.

High-k dielectrics are primarily utilized in the gate dielectric layer of metal-oxide-semiconductor field-effect transistors (MOSFETs). Their high dielectric constant allows for a thicker gate oxide ...

To further reduce the size of electronic devices, while also improving their performance and energy efficiency, electronics ...

Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer. Nature Nanotechnology, 2023; DOI: 10.1038/s41565-023-01497-x ...

Find the technical paper here. Published August 2023. S. Kim et al., “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET),” in IEEE Access, vol. 11, pp.