This course introduces more advanced concepts of switched-mode converter circuits. Realization of the power semiconductors in inverters or in converters having bidirectional power flow is explained.

Looking at a full-bridge circuit board with a shoot-through issue and demonstrating the fix with a simple SPICE simulation.

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products.

Volume shipments start today. In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current [1] when the lower arm [2] is turned off ...

It has inverter-based inertia and improved short-circuit ratios ... combining cutting-edge SiC MOSFET technology with advanced grid-forming capabilities to support high-performance, scalable ...