The first shipments are Gen 2 650V, 40A devices in a TO-247 package with a co-packed diode.

V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...

The company says that ICeGaN technology allows EV engineers to enjoy GaN’s benefits in DC-to-DC converters, on-board chargers ...

Compared to the previous generation, this IGBT decreases conduction loss by approximately 25% and boosts system efficiency by ...

Cambridge GaN Devices (CGD) has revealed more details about a solution allowing the company to address EV powertrain applications over 100kW – a market worth over $10B - with its ICeGaN GaN technology ...

"Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

New-Generation Products Highlight Company’s Increased Focus on Power Optimized conduction and switching losses to enhance system efficiency A diverse range of IGBT products to meet the evolving ...