onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

The company says that ICeGaN technology allows EV engineers to enjoy GaN’s benefits in DC-to-DC converters, on-board chargers ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

TDK has shrunk its 500V gate drive transformers to 11 x 13mm and 11mm high, smaller than its existing E10EM series. The new ...

In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current ...

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a gate driver photocoupler, "TLP5814H," with ...

Cambridge GaN Devices (CGD) has revealed more details about a solution allowing the company to address EV powertrain applications over 100kW – a market worth over $10B - with its ICeGaN GaN technology ...

"Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN ...

Volume shipments start today. In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current [1] when the lower arm [2] is turned off ...

Notes: [1] Miller current: Electric current generated when high dv/dt voltage is applied to capacitance between the drain and gate of a MOSFET or between the collector and gate of an IGBT. [2] The ...