These features make them suited for three-phase inverter drive applications such as electronically commutated (EC) fans in AI ...

This module covers the basics of power semiconductor switches, including the origins of switching times and switching loss, how to incorporate switching loss into equivalent circuit models, and ...

V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...

which could damage the IGBTs since they can’t switch much faster with the relatively large currents needed. An important part of designing Tesla coil driver circuits is matching the primary coil ...

that incorporates an active Miller clamp function for driving silicon carbide (SiC) MOSFETs. Volume shipments start today. In circuits such as inverters, where MOSFETs or IGBTs are used in series ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

The company’s GaN hemts are ICs that include gate drive circuits that allow them to ... Sensing and protection functions, along with optimal driving, can enhance the safe operating area of the ...

and a peak clamp sinking current rating of 6.8A, making it suitable as a gate driver for SiC MOSFETs ... the collector and gate of an IGBT. [2] The lower arm is the part that draws current from the ...