onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current ...

The company says that ICeGaN technology allows EV engineers to enjoy GaN’s benefits in DC-to-DC converters, on-board chargers ...

This course introduces more advanced concepts of switched-mode converter circuits. Realization of the power semiconductors in inverters or in converters having bidirectional power flow is explained.

TDK CORP. EPCOS EP9 series (ordering code: B82804E) gate driver transformer is more compact than firm’s existing E10EM series of surface-mount devices ...

A transformer designed for high-voltage systems ensures performance with low coupling capacitance, strong insulation & a wide ...

NoMIS Power will be showcasing this breakthrough technology at APEC 2025, March 16-20, Atlanta, GA, Booth 548 along with its expanded range of SiC discretes and power modules. For more information ...

Volume shipments start today. In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current [1] when the lower arm [2] is turned off ...

TDK Corporation has unveiled the EPCOS EP9 series (ordering code: B82804E), which is more compact than the existing E10EM series of surface-mount transformers designed especially for IGBT and FET gate ...