Housed in fully isolated TO-220 package, the two chips are rated at 1,500V (damper diode) and 600V (modulation diode) for high reliability, and feature high-speed switching and low conduction losses.

The Inverter 1 design, with a small heatsink close to the air output side, leads to relatively “cold” areas inside the housing and the IGBT junction temperature does not influence all areas of ...

The 1200V diode’s combination of superior switching performance, higher reliability and low electromagnetic interference (EMI) make it ideal for next-generation solar inverters, industrial motor ...

In solar PV inverters and converters, just 1% efficiency improvement matters a lot in gaining the market advantage in power supply industry. However best you design your power electronics, the ...

Cree SiC MOSFET and Diode Technologies achieve higher efficiency and up to 15% lower cost at one-fifth the size and weight of comparable silicon technologies March 23, 2015 Cree, Inc.

The company has already operated a hybrid design with silicon IGBTs and 1.7kV SiC Schottkys on an underground train, which demonstrated 38.6% power savings compared with the conventional system.

Fairchild, a leading global supplier of high-performance semiconductor solutions, released its first 1200V silicon carbide (SiC) diode, the FFSH40120ADN, in its series of upcoming SiC solutions ...