While the NbP layer was amorphous, it also held nanocrystals ... The researchers found that the low resistivity of the thin film is due to its surfaces being more conductive than the bulk of ...

75.5cm2/V/s mobility and high stability are claimed for amorphous oxide semiconductor thin-film transistors created at the Ningbo Institute of Materials Technology and Engineering (NIMTE). The ...

In particular, it was suggested that differences in resistivity between the crystalline and amorphous phases could ... phase was that the structure of thin films used in devices is like that ...